Bipolar Junction Transistor Configurations

**Strings (S _{i}P_{j}A_{jk}) = S_{7}P_{5}A_{51} Base Sequence = 12735 String Sequence = 12735 - 5 - 51**

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Bipolar Junction Transistor Configuration

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There are three primary types of BJT configurations: *common-emitter* (emitter is common to both input and output circuits), *commom-collector* (collector is common to both input and output circuits) and *common-base* (base is common to both input and output circuits). Figure 122.6 illustrates the common-emitter and common-collector .

(a) Indicate the common application scenario for each BJT configuration

(b) The following are circuit values for the common-emmitter of figure 122.6(a):

V_{s} = 1 cos(6.28 x 10^{3}t) mV; V_{CC} = 15 V

Current gain, β = I_{C}/I_{B} = 100 .

R_{1} = 68 kΩ; R_{2} = 11.7 kΩ;

R_{C} = 200 Ω; R_{E} = 200 Ω;

R_{L} = 1.5 kΩ; R_{s} = 0.9 kΩ;

Determine V_{CEQ} and the region of operation.

**The strings**:
S_{7}P_{5}A_{51} (Physical Change).
**The math**:

Pj Problem of Interest is of type *change* (physical change). Transistors are primarily used for signal *amplification* and *switching*. Both are *change* problems.

**(a)i Common-Emitter**: output at collector and inverted.
*Application scenario*: if relatively high voltage and power gain is desired. Low input impedance and high output impedance.
**(ii) Common-Collector**: output at emitter and noninverted.
*Application scenario*: voltage gain considered at unity. High input impedance and low output impedance.
**(iii) Common-Base**: rarely used.
*Application scenario*: unstable at high gain values. Very low input impedance and high output impedance.

Sometimes used as the first RF amplifier stage, amplifying signals from radio antennas.
**(b)** Try it. Answer: V_{CEQ} = 13.00 V; BJT is in the active region.

The *point* **.** is a mathematical abstraction. It has negligible size and a great sense of position. Consequently, it is front and center in abstract existential reasoning.

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