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Figure 123.2 illustrates an enhancement-mode NMOS. The threshhold voltage, VT = 2 V, The source terminal of the nmos is grounded and a voltage source VGG = 3 V DC is connected to the gate.
Determine the operating state of the transistor for each of the following values of vD:
(a) vD = 0.5 V
(b) vD = 1 V
(c) vD = 5 V
S7P5A51 (Physical Change).
Pj Problem of Interest is of type change (physical change). Transistors are primarily used for signal amplification and switching. Both are change problems.
(a)The NMOS has three terminals: gate (G), the drain (D), and the source (S).
It has a p-material substrate (or bulk) electrically connected to the source. So the substrate does not appear as a separate terminal in circuit diagram.
The gate consists of a metal film separated from the p-substrate by a thin oxide layer (hence called metal oxide semiconductor).
both drain and source are made of n+ material.
(a)vGS = 3 V
vGD = vGS + vSD = vGS - vDS = vGS - vD = 3 - 0.5 = 2.5 V.
Where vGS = gate-source voltage
vGD = gate-drain voltage
vDS = drain-source voltage
vSD = source-drain voltage
So, vGS > VT and vGD > VT
So, NMOS is operating in the Triode or Ohmic Region.
(b) vGS = 3 V
vGD = vGS + vSD = vGS - vDS = vGS - vD = 3 - 1 = 2 V.
So, vGS > VT and vGD = VT
So, NMOS is operating in the Triode or Ohmic Region; or Saturation Region.
(c) vGS = 3 V
vGD = vGS + vSD = vGS - vDS = vGS - vD = 3 - 5 = -2 V.
So, vGS > VT and vGD < VT
So, NMOS is operating in the Saturation Region.
The point . is a mathematical abstraction. It has negligible size and a great sense of position. Consequently, it is front and center in abstract existential reasoning.
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